Cristiano Caruso,1 Rocco Luigi Valluzzi,2 Stefania Colantuono,1 Francesco Gaeta,1 Antonino Romano3,4 1Allergy Unit, Columbus Hospital, Fondazione Policlinico A.Gemelli, IRCCS, Rome, Italy; 2Department of Pediatrics, Division of Allergy, Pediatric Hospital Bambino Gesù, Rome, Vatican City, Italy; 3Oasi Research Institute-IRCCS, Troina, Italy;
The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density.However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of Si
Abstract This article is devoted to a study of the blow-up result for a system of coupled viscoelastic wave equations.By establishing a new auxiliary function and L-Carnosine using the reduction to absurdity method, we obtain some sufficient conditions on initial data such that the solution blows up in finite time at arbitrarily high initial stride